Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With housing or contact structure
Reexamination Certificate
2007-02-20
2010-11-16
Mandala, Victor A (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With housing or contact structure
C257S096000, C257SE33063, C257SE33068, C257SE33067
Reexamination Certificate
active
07834374
ABSTRACT:
An LED having vertical topology and a method of making the same is capable of improving a luminous efficiency and reliability, and is also capable of achieving mass productivity. The method includes forming a semiconductor layer on a substrate; forming a first electrode on the semiconductor layer; forming a supporting layer on the first electrode; generating an acoustic stress wave at the interface between the substrate and semiconductor layer, thereby separating the substrate from the semiconductor layer; and forming a second electrode on the semiconductor layer exposed by the separation of the substrate.
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International Search Report dated Jan. 26, 2007.
Bae Duk Kyu
Cho Hyun Kyong
Choi Jae Wan
Jang Jun Ho
Kim Sun Jung
LG Electronics Inc.
LG Innotek Co. Ltd.
Mandala Victor A
McKenna Long & Aldridge LLP
Stowe Scott
LandOfFree
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