Light emitting diode having silicon carbide layers

Details Light emitting diode having silicon carbide layers Light emitting diode having silicon carbide layers

1983-02-16

1985-07-23

Davie, James W.

357 56, 357 61, 357 65, H01L 3300

Patent

active

045311420

ABSTRACT:
A light emitting diode has a substrate body consisting of silicon carbide, which is transmissive for the luminescent radiation generated by the diode. The diode has a first epitaxially deposited layer, consisting of silicon carbide of a first conductivity type, disposed on the substrate body, and a second epitaxially deposited layer of silicon carbide of a second conductivity type disposed on the first layer. The diode has one electrode connected to the second layer and another electrode connected to an exposed portion of the first layer.

REFERENCES:
patent: 4316208 (1982-02-01), Kobayashi et al.
W. V. Munch and W. Kurzinger, Solid State Electronics, vol. 21, No. 9, Sep. 1978, pp. 1129-1132.

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