Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Making emissive array
Reexamination Certificate
2009-12-08
2010-12-07
Smith, Zandra V. (Department: 2822)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Making emissive array
C257S097000, C257S098000, C257SE33062, C438S042000
Reexamination Certificate
active
07846755
ABSTRACT:
The present invention discloses a light emitting diode. The light emitting diode includes a plurality of light emitting cells arranged on a substrate, each light emitting cell including a first semiconductor layer and a second semiconductor layer arranged on the first semiconductor layer; a first dielectric layer arranged on each light emitting cell and including a first opening to expose the first semiconductor layer and a second opening to expose the second semiconductor layer; a wire arranged on the first dielectric layer to couple two of the light emitting cells; and a second dielectric layer arranged on the first dielectric layer and the wire. The first dielectric layer and the second dielectric layer comprise the same material and the first dielectric layer is thicker than the second dielectric layer.
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European Search Report dated Mar. 12, 2010 in European Application No. 09013481.8.
Kal Dae Sung
Kim Dae Won
Lee Joo Woong
Seo Won Cheol
Ye Kyung Hee
H.C. Park & Associates PLC
Patton Paul E
Seoul Semiconductor Co. Ltd.
Smith Zandra V.
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