Light-emitting diode having moisture-proof characteristics and h

Details Light-emitting diode having moisture-proof characteristics and h Light-emitting diode having moisture-proof characteristics and h

1998-12-01

2000-03-28

Tran, Minh Loan

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

257 94, 257 96, 257103, H01L 2906

Patent

active

060435097

ABSTRACT:
A Light-emitting diode having improved moisture resistance characteristics comprises a p-type gallium arsenide substrate and four epitaxial layers of Al.sub.x Ga.sub.1-x As (22, 23, 24 and 25). These epitaxial layers comprises an intervening layer (22) of p-type Al.sub.x1 Ga.sub.1-x1 As, a cladding layer (23) of p-type Al.sub.x2 Ga.sub.1-x2 As, an active layer (24) of Al.sub.x3 Ga.sub.1-x3 As, and a window layer (25) of Al.sub.x4 Ga.sub.1-x4 As so as to form a double-hetero structure, where x1, x2, x3 and x4 represent mixed crystal ratios of aluminum to arsenic of the layers, respectively, and meet the condition that:

REFERENCES:
patent: 4592791 (1986-06-01), Nakajima et al.
patent: 4944811 (1990-07-01), Sukegawa et al.
patent: 5061643 (1991-10-01), Yagi
patent: 5093696 (1992-03-01), Kinoshita
patent: 5491350 (1996-02-01), Unno et al.

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