Light emitting diode having modulation doped layer

Details Light emitting diode having modulation doped layer Light emitting diode having modulation doped layer

2011-07-19

2011-07-19

Tran, Tan N (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

C257S013000, C257S098000, C257S101000, C257S102000, C257S103000, C257SE33008

Reexamination Certificate

active

07982210

ABSTRACT:
A light emitting diode (LED) having a modulation doped layer. The LED comprises an n-type contact layer, a p-type contact layer and an active region of a multiple quantum well structure having an InGaN well layer. The n-type contact layer comprises a first modulation doped layer and a second modulation doped layer, each having InGaN layers doped with a high concentration of n-type impurity and low concentration of n-type impurity InGaN layers alternately laminated. The InGaN layers of the first modulation doped layer have the same composition, and the InGaN layers of the second modulation doped layer have the same composition. The second modulation doped layer is interposed between the first modulation doped layer and the active region, and an n-electrode is in contact with the first modulation doped layer. Accordingly, an increase in process time is prevented and strains induced in a multiple quantum well structure are reduced.

REFERENCES:
patent: 7692182 (2010-04-01), Bergmann et al.

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