Light emitting diode having conductive reflecting layer

Details Light emitting diode having conductive reflecting layer Light emitting diode having conductive reflecting layer

2006-02-08

2008-11-04

Jackson, Jerome (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

C438S022000, C438S029000

Reexamination Certificate

active

07446342

ABSTRACT:
There is provided a semiconductor light emitting diode and a method of manufacturing the same that enable voltage in the forward direction to be decreased while allowing light extraction efficiency to be improved. This semiconductor light emitting diode is formed by a substrate, a light emitting portion that is disposed on one main surface of the substrate, a first electrode that is disposed on the light emitting portion, a pad electrode that is disposed on the first electrode, concave portions that are formed on at least a portion of the one main surface of the substrate, and a conductive layer that is formed from a conductive material that is disposed in the concave portions and reflects light emitted from the light emitting portion.

REFERENCES:
patent: 5406095 (1995-04-01), Koyama et al.
patent: 2003/0048822 (2003-03-01), Nakatsu et al.
patent: 2003163368 (2003-06-01), None
Contant resistance (1992). In Academic Press dictionary of Science and Technology. Retrieved Dec. 10, 2007, from http://www.credoreference.com/entry/0389573.

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