Light emitting diode having an insulating substrate

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With housing or contact structure

Reexamination Certificate

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Details

C257S013000, C257S103000, C257S097000, C257S079000, C257S613000, C257S615000, C257S046000, C257S104000, C257S106000

Reexamination Certificate

active

06936860

ABSTRACT:
An LED includes an insulating substrate; a buffer layer positioned on the insulating substrate; an n+-type contact layer positioned on the buffer layer, the contact layer having a first surface and a second surface; an n-type cladding layer positioned on the first surface of the n+-type contact layer; a light-emitting layer positioned on the n-type cladding layer; a p-type cladding layer positioned on the light-emitting layer; a p-type contact layer positioned on the p-type cladding layer; an n+-type reverse-tunneling layer positioned on the p-type contact layer; a p-type transparent ohmic contact electrode positioned on the n+-type reverse-tunneling layer; and an n-type transparent ohmic contact electrode positioned on the second surface of the n+-type contact layer. The p-type transparent ohmic contact electrode and the n-type transparent ohmic contact electrode are made of the same materials.

REFERENCES:
patent: 5889295 (1999-03-01), Rennie et al.
patent: 5900650 (1999-05-01), Nitta
patent: 6020602 (2000-02-01), Sugawara et al.
patent: 6078064 (2000-06-01), Ming-Jiunn
patent: 6121634 (2000-09-01), Saito et al.
patent: 6121635 (2000-09-01), Watanabe et al.
patent: 6288416 (2001-09-01), Koide et al.
patent: 08-102550 (1996-04-01), None
patent: 09-074246 (1997-03-01), None

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