Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – In combination with or also constituting light responsive...
Reexamination Certificate
2005-04-05
2005-04-05
Wilson, Allan R. (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
In combination with or also constituting light responsive...
C257S096000
Reexamination Certificate
active
06876005
ABSTRACT:
A method for forming a light emitting diode includes forming a first stack, forming a second reaction layer over the first stack, forming a second stack, forming a first reaction layer over the second stack, and holding together the first reaction layer and the second reaction layer by means of a transparent adhesive layer. The transparent adhesive layer is formed between the first and second reaction layer, therefore the second reaction layer of the first stack will not come off the first reaction layer of the second stack.
REFERENCES:
patent: 6420736 (2002-07-01), Chen et al.
patent: 6563139 (2003-05-01), Hen
patent: 6576933 (2003-06-01), Sugawara et al.
patent: 6583443 (2003-06-01), Chang et al.
Hsieh Min-Hsun
Liu Wen-Huang
Tseng Tzu-Feng
Wang Jen-Shui
Yeh Ting-Wei
Epistar Corporation
Hsu Winston
Wilson Allan R.
LandOfFree
Light emitting diode having an adhesive layer does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Light emitting diode having an adhesive layer, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Light emitting diode having an adhesive layer will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3395415