Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With heterojunction
Reexamination Certificate
2009-04-20
2010-11-16
Soward, Ida M (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With heterojunction
C257S013000, C257S079000, C257S088000, C257SE33064
Reexamination Certificate
active
07834368
ABSTRACT:
A light-emitting diode includes a substrate, a primary stack structure, a secondary stack structure, a transparent insulating material and a transparent conducting layer in an embodiment. Each of the primary and the secondary stack structure has a first conducting-type semiconductor layer, and illuminating layer, and a second conducting-type semiconductor layer sequentially formed on the substrate, wherein plural pillar-like holes are formed at the top surface of the second conducting-type semiconductor layer of the secondary stack structure and protrude into the first conducting-type semiconductor layer of the secondary stack structure. The transparent insulating material is filled into the holes. The transparent conducting layer is coated on the primary stack structure, the transparent insulating material, and the tope surface of the second conducting-type semiconductor layer of the secondary stack structure.
REFERENCES:
patent: 5974071 (1999-10-01), Jiang et al.
patent: 6057561 (2000-05-01), Kawasaki et al.
patent: 6518598 (2003-02-01), Chen
patent: 6531405 (2003-03-01), Wegleiter et al.
patent: 6753552 (2004-06-01), Lan et al.
patent: 6993214 (2006-01-01), Nishimura et al.
patent: 7079562 (2006-07-01), Sakamoto et al.
patent: 7329587 (2008-02-01), Bruederl et al.
patent: 7473936 (2009-01-01), Tran et al.
patent: 7528540 (2009-05-01), Ikeda
patent: 2005/0031005 (2005-02-01), Cheng et al.
patent: 2005/0242712 (2005-11-01), Sung
patent: 2005/0287899 (2005-12-01), Redecker
patent: 2006/0044561 (2006-03-01), Nii
patent: 2008/0121906 (2008-05-01), Yakushiji
patent: 2008/0191191 (2008-08-01), Kim
patent: 2008/0315229 (2008-12-01), Yi et al.
patent: 2010/0059733 (2010-03-01), Shei et al.
patent: 2010/0059769 (2010-03-01), Jeong
Kao Lin-Chieh
Yang Shu-Ying
Huga Optotech Inc.
Shih Chun-Ming
Soward Ida M
LandOfFree
Light-emitting diode having additional stack structure does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Light-emitting diode having additional stack structure, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Light-emitting diode having additional stack structure will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4252060