Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Reexamination Certificate
2005-03-15
2005-03-15
Dang, Phuc T. (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
C257S908000
Reexamination Certificate
active
06867426
ABSTRACT:
A light emitting diode having a transparent substrate and a method for manufacturing the same. The light emitting diode is formed by creating two semiconductor multilayers and bonding them. The first semiconductor multilayer is formed on a non-transparent substrate. The second semiconductor multilayer is created by forming an amorphous interface layer on a transparent substrate. The two semiconductor multilayers are bonded and the non-transparent substrate is removed, leaving a semiconductor multilayer with a transparent substrate.
REFERENCES:
patent: 4728370 (1988-03-01), Ishii et al.
Chuang Keun-Ru
Hsieh Min-Hsun
Huang Chao-Nien
Jou Ming-Jiunn
Liu Chia-Cheng
Dang Phuc T.
Epistar Corporation
Hsu Winston
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