Light emitting diode having a transparent substrate

Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction

Reissue Patent

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C257S013000, C257S037000

Reissue Patent

active

RE042422

ABSTRACT:
A light emitting diode having a transparent substrate and a method for manufacturing the same. The light emitting diode is formed by creating two semiconductor multilayers and bonding them. The first semiconductor multilayer is formed on a non-transparent substrate. The second semiconductor multilayer is created by forming an amorphous interface layer on a transparent substrate. The two semiconductor multilayers are bonded and the non-transparent substrate is removed, leaving a semiconductor multilayer with a transparent substrate.

REFERENCES:
patent: 4728370 (1988-03-01), Ishii et al.
patent: 6103543 (2000-08-01), Uemura et al.
patent: 6157047 (2000-12-01), Fujita et al.
patent: 6509581 (2003-01-01), Tsai et al.
patent: 6787814 (2004-09-01), Udagawa
patent: 7132691 (2006-11-01), Tanabe et al.

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