Light-emitting diode having a transparent substrate

Details Light-emitting diode having a transparent substrate Light-emitting diode having a transparent substrate

1998-05-20

2000-05-16

Tran, Minh Loan

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

257 96, 257101, 257103, H01L 3300

Patent

active

060640766

ABSTRACT:
A light-emitting diode having a transparent substrate contains a transparent GaP substrate having a first lattice constant, a first ohmic contact to the GaP substrate, a buffer layer having a graded lattice constant which gradually changes from a first lattice constant to a second lattice constant, a light generating region formed on the buffer layer and having the second lattice constant, and a second ohmic contact formed on the light generating region. In the present invention, light emitted to the substrate is not absorbed by the transparent substrate. Therefore, the brightness of the LED is increased and the V.sub.f value is not increased.

REFERENCES:
patent: 4570172 (1986-02-01), Henry et al.
patent: 5237581 (1993-08-01), Asada et al.
patent: 5523589 (1996-06-01), Edmond et al.

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