Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure
Reexamination Certificate
2006-06-05
2011-10-18
Nguyen, Dao (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
C257S089000, C257S090000, C257S098000, C257S099000, C257S100000, C257SE27120, C257SE27127, C257SE33056, C257SE33062, C438S022000, C438S080000, C438S082000, C438S089000
Reexamination Certificate
active
08039846
ABSTRACT:
Disclosed are a light emitting diode having a thermal conductive substrate and a method of fabricating the same. The light emitting diode includes a thermal conductive insulating substrate. A plurality of metal patterns are spaced apart from one another on the insulating substrate, and light emitting cells are located in regions on the respective metal patterns. Each of the light emitting cells includes a P-type semiconductor layer, an active layer and an N-type semiconductor layer. Meanwhile, metal wires electrically connect upper surfaces of the light emitting cells to adjacent metal patterns. Accordingly, since the light emitting cells are operated on the thermal conductive substrate, a heat dissipation property of the light emitting diode can be improved.
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H.C. Park & Associates PLC
Nguyen Dao
Seoul Opto Device Co., Ltd.
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