Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With housing or contact structure
Patent
1992-11-24
1994-05-03
Hille, Rolf
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With housing or contact structure
257 91, 257773, H01L 3300
Patent
active
053090012
ABSTRACT:
A surface electrode on a surface of a LED has a pad, and further, at least first-order branches linearly extending from the pad, second-order branches diverged and linearly extending from the first-order branches, and third-order branches diverged and linearly extending from the second-order branches. The pad out of the surface electrode is not in electrical contact with a underlying semiconductor layer, whereas the surface electrode and the semiconductor layer are in electrical contact with each other at ends of the highest-order branches. Also, the semiconductor layer is provided along a pattern of the surface electrode in a mesa shape. Thus, ineffective light emission underneath the surface electrode is relatively reduced so that external quantum efficiency can be improved, and moreover even shorter-wavelength light can be allowed to go out at high efficiency by omitting a current diffusion layer.
REFERENCES:
patent: 4864370 (1989-09-01), Gaw et al.
patent: 5132750 (1992-07-01), Kato et al.
Patent Abstracts of Japan, vol. 10, No. 145 (E-407)(2202) 28 May 1986 & JP-A-61-6 880 (Roomu K.K.) 13 Jan. 1986, Ichihara et al.
Patent Abstracts of Japan, vol. 13, No. 53 (E713) 7 Feb. 1989 & JP-A-63-245 969 (Seiko Epson Corp.), 13 Oct. 1988, Takashi.
Stinson, et al., "High-efficiency InGaP light-emitting diodes on GaP substrates", Applied Physics Letters, 58(18):2012-2014 (1991).
Matsumoto Mitsuhiro
Nakatsu Hiroshi
Sasaki Kazuaki
Takeoka Tadashi
Watanabe Masanori
Hille Rolf
Sharp Kabushiki Kaisha
Tran Minhloan
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