Light emitting diode having a short transient response time

Details Light emitting diode having a short transient response time Light emitting diode having a short transient response time

1976-01-26

1977-09-20

Demeo, Palmer C.

Electric lamp and discharge devices

With luminescent solid or liquid material

Solid-state type

357 17, H05B 3316

Patent

active

040499944

ABSTRACT:
A body of semiconductor material of an electroluminescent device is on a gallium arsenide substrate of N type conductivity. The body includes a first region of N type conductivity aluminum gallium arsenide contiguous to a surface of the substrate and a second region of silicon doped P type gallium arsenide on the first region and spaced from the substrate. The P-N junction between the first and second regions is a heterojunction, and is the only heterojunction with the second region. The second region is of a thickness, extending from the P-N junction, in the range of 50 to 200 micrometers. The electroluminescent device is capable of transient response time of 0.2 microseconds or less.

REFERENCES:
patent: 3419742 (1968-12-01), Herzog
patent: 3537029 (1970-10-01), Kressel et al.
patent: 3636416 (1972-01-01), Umeda
patent: 3920491 (1975-11-01), Yonezu

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