Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With heterojunction
Patent
1998-05-20
2000-08-08
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With heterojunction
257 96, 257 97, 257103, 438 46, 438 47, 372 44, 372 45, H01L 3300
Patent
active
061005444
ABSTRACT:
A light emitting diode includes a double hetero structure containing an upper cladding layer with a graded composition. The light emitting diode comprises a GaAs substrate, a first ohmic contact to the substrate, an AlGaInP lower cladding layer formed on the GaAs substrate, an AlGaInP active layer formed on the lower cladding layer, an AlGaInP upper cladding layer formed on the active layer and a second ohmic contact. The AlGaInP upper cladding layer has a graded composition which increases the LED brightness and decreases the forward bias voltage of the light emitting diode. The graded composition can also be used in the upper semiconducting layer of a conventional p-n junction light emitting diode.
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patent: 5218613 (1993-06-01), Serreze
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patent: 5458085 (1995-10-01), Kondo et al.
patent: 5714014 (1998-02-01), Horikawa
patent: 5744829 (1998-04-01), Murasato et al.
Chen Lung-Chien
Lin Kun-Chuan
Mintel William
Visual Photonics Epitaxy Co., Ltd.
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