Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With particular semiconductor material
Reexamination Certificate
2006-11-07
2006-11-07
Keith, Jack (Department: 3663)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With particular semiconductor material
Reexamination Certificate
active
07132695
ABSTRACT:
A light emitting diode with a dual dopant contact layer. The light emitting diode includes a substrate, a light emitting stacked structure formed on the substrate, a dual dopant contact layer formed on the light emitting stacked structure, and a transparent conductive oxide layer formed on the dual dopant contact layer. The dual dopant contact layer has a plurality of p-type dopants and a plurality of n-type dopants after being fabricated.
REFERENCES:
patent: 5925897 (1999-07-01), Oberman
patent: 5981977 (1999-11-01), Furukawa et al.
patent: 6207972 (2001-03-01), Chen et al.
patent: 6515308 (2003-02-01), Kneissl et al.
patent: 6554896 (2003-04-01), Asai et al.
patent: 6586777 (2003-07-01), Yuasa et al.
patent: 6657234 (2003-12-01), Tanizawa
patent: 6657300 (2003-12-01), Goetz et al.
patent: 2001/0038656 (2001-11-01), Takeuchi et al.
patent: 2002/0008245 (2002-01-01), Goetz et al.
patent: 2002/0053679 (2002-05-01), Nikolaev et al.
patent: 2002/0093020 (2002-07-01), Edmond et al.
patent: 2002/0117681 (2002-08-01), Weeks et al.
patent: 2002/0121646 (2002-09-01), Khare et al.
patent: 2002/0142563 (2002-10-01), Sakai et al.
patent: 2003/0183827 (2003-10-01), Kawaguchi et al.
patent: 2003/0201460 (2003-10-01), Seaford et al.
patent: 2000-36616 (2000-02-01), None
patent: 2002-134416 (2002-05-01), None
Merriam-Webster Collegiate Dictionary, Merriam-Webster Inc., Springfield, MA (USA) (1999) 10th Ed., p. 210.
Wong et al, “Continuous-wave InGaN MQW Laser Diodes on Copper and Diamond Substrates (Forum Nitride Lasers)”, Compound Semiconductor Magazine, Mar. 2001 (3 pages).
M. Fukuda, “Optical Semiconductor Devices”, John Wiley & Sons, New York (1999), p. 12.
O. Madelung, “Semiconductors—Basic Data”, Springer Verlag, Berlin (1996), p. 90.
M. Fukuda “Optical Semiconductor Devices” John Wiley & Sons, New York 1999, pp. 82-85.
Chang Jia-Rong
Hsu Chen-Ke
Jing Chang-Huei
Ou Chen
Diacou Ari M.
Epistar Corporation
Hsu Winston
Keith Jack
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