Coherent light generators – Particular component circuitry – Optical pumping
Patent
1985-08-20
1987-11-10
Davie, James W.
Coherent light generators
Particular component circuitry
Optical pumping
357 16, 372 45, 372 46, H01L 3300
Patent
active
047061014
ABSTRACT:
A light emitting diode is disclosed which includes an N-GaAs substrate, a double hetero-junction structure obtained by forming an N-GaAlAs clad layer, a P-GaAs active layer and a P-GaAlAs clad layer on the substrate in that order, and a current narrowing structure obtained by selectively forming a contact metal on the P-GaAlAs clad layer in the double hetero-junction structure with the contact metal formed around the contact metal. In the light emitting diode so manufactured, the double hetero-junction structure is formed by a metal organic vapor deposition method. The N-GaAlAs clad layer is of a three-layer structure with one layer of a narrower forbidden band width sandwiched between the remaining two layers of a wider forbidden band width.
REFERENCES:
patent: 3936855 (1976-02-01), Goell et al.
patent: 4053914 (1977-10-01), Goodwin
patent: 4184170 (1980-01-01), Burnham et al.
patent: 4447822 (1984-05-01), Chin et al.
Materials Letters, vol. 2, No. 3, Feb. 1984, pp. 184-188, Amsterdam, NL; S. Mahajan et al., "The Origin of Dark Spot Defects in InP/InGa As P Aged Light Emitting Diodes", FIG. 1, p. 184, last paragraph.
Applied Physics Letters, vol. 43, No. 1, Jul. 1, 1983, pp. 103-105, New York (US), K. Mohammed et al.: "Effects of V/III Variation on the Optical Properties of GaAs and GaACAs Grown by Metalorganic Chemical Vapor Deposition".
Optical Communication; 9th European Conference of Optical Communication-ECOC83, Genev. 23-26 Oct. 1983, (Switzerland); edited by H. Melchior & A. Sollberger, Institute for Applied Physics, Zurich (CH), pp. 471-474, M. Krakowski et al.: AlGaAs/GaAs Double Heterostructure Super Luminescent Diodes for Fibre Gyro. *Abstract; p. 471, paragraphs 5 and 6, FIG. 1.
IEEE Journal of Quantum Electronics, vol. QE15, No. 3, Mar. 1979, pp. 128-135, New York (US), R. Dupuis et al.: "Preparation and Properties of GaAlAs-GaAs Heterostructure Lasers Grown by Metal Organic Chemical Vapor Deposition".
Ibid, vol. QE17, No. 3, Mar. 1981, pp. 387-391, New York (US), T. P. Lee: "Improved Molecular Beam Epitaxial Growth of AlGaAs/GaAs High Radiance LED's for Optical Communications.", *FIG. 1; Section II and Section V*.
European Conference of Optical Communication Held at Cannes (FR), 21-24 Sep. 1982; Communication B1-4, pp. 118-123, P. Hirtz et al., "Life Tests of L.P.E. and M.O.V.P.E. Shallow Proton Stripe GaInAsP Laser Diodes", *p. 120, section 3, entitled "Metal Organic Vapour Phase Epitaxy"; FIG. 3.
Japanese Journal of Applied Physics, vol. 22, No. 7, part 2, Jul. 1983, pp. L450-L451, Tokyo (JP), Y. Shinoda et al.: "GaAs Light Emitting Diodes Fabricated on SiO2/Si Wafers.", *p. L450, left hand col., last paragraph-right-hand col., pentultimate paragraph*.
Applied Physics Letters, vol. 43, No. 1, Jul. 1, 1983, pp. 103-105, New York (US), K. Mohammed et al.: "Effect of V/III Variation of GaAs and GaACAs Grown by Metalorganic Chemical Vapor Deposition".
J. Cryst. Growth; vol. 55, 1981, pp. 223-228.
Komatsubara Tadashi
Nakamura Masaru
Nitta Koichi
Okajima Masaki
Sadamasa Tetsuo
Davie James W.
Epps Georgia Y.
Kabushiki Kaisha Toshiba
LandOfFree
Light emitting diode formed of a compound semiconductor material does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Light emitting diode formed of a compound semiconductor material, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Light emitting diode formed of a compound semiconductor material will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1071090