Light-emitting diode fabrication process

Details Light-emitting diode fabrication process Light-emitting diode fabrication process

1974-08-08

1976-02-03

Edlow, Martin H.

357 18, 357 16, 357 55, H01L 3300

Patent

active

039368556

ABSTRACT:
A method and structure are provided for the simplified batch fabrication of Gallium Arsenide-Aluminum Gallium Arsenide lightemitting diodes. A high aluminum content AlGaAs layer is formed on the GaAs substrate layer to provide an etch resistant mask, and an etchant is employed which preferentially etches the GaAs. This permits simultaneous etching of the substrate to form a plurality of like devices on a common semiconductor wafer in a repeatable low-cost batch process.

REFERENCES:
patent: 3677836 (1972-07-01), Lorenz
patent: 3752713 (1973-08-01), Sakuta
patent: 3833435 (1974-09-01), Logan
I.B.M. Tech. Bull., Vol. 15, No. 1, June 1972, p. 147, article by Potemski et al.

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