Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With heterojunction
Patent
1995-01-27
1996-10-29
Crane, Sara W.
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With heterojunction
257 13, 257 81, 257 82, 257 84, 257 85, 257 86, 257 90, 257 96, 257 97, H01L 2906, H01L 2715, H01L 3300
Patent
active
055699391
ABSTRACT:
A light emitting diode (LED) and resistors for varying the light intensity of the LED are formed on a single chip. Each of the LED portion and the resistor portion includes an active layer and a clad layer successively deposited on a substrate of the chip. The substrate may be doped with one of P-type dopant and N-type dopant and the clad layer with the other of P and Y-type dopants. A first and second electrodes are formed on an exposed surface of the substrate and the clad layer of the LED portion respectively. A plurality of resistor electrodes are formed on the clad layer of the resistor portion. It is preferable to have different spacing between the resistor electrodes to form variable resistances.
REFERENCES:
patent: 4212020 (1980-07-01), Yariv et al.
patent: 5075239 (1991-12-01), Tegude
patent: 5283447 (1994-02-01), Olbright et al.
Crane Sara W.
Goldstar Co. Ltd.
Martin Wallace Valencia
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