Electric lamp and discharge devices – With luminescent solid or liquid material – Solid-state type
Reexamination Certificate
2011-02-28
2011-11-22
Ton, Toan (Department: 2889)
Electric lamp and discharge devices
With luminescent solid or liquid material
Solid-state type
C445S023000, C257S013000
Reexamination Certificate
active
08063549
ABSTRACT:
A substrate for semiconductor device includes a graphite substrate, an amorphous carbon layer having a thickness of not less than 20 nm and not more than 60 nm formed on the graphite substrate and an AlN layer formed on the amorphous carbon layer. The amorphous carbon layer is obtained by oxidizing the surface of the graphite substrate.
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Taniyasu et al. “MOVPE growth of single-crystal hexagonal AIN on cubic diamond”, Journal of Crystal Growth Jan. 14, 2009.
Shuji Nakamura et al., “Superbright Green InGaN Single-Quantum-Well-Structure Light-Emitting Diodes,” Jpn. J. Appl. Phys. vol. 34 (1995) pp. L1332-L1335.
Hamada Takahiro
Itoh Akihiro
Nagao Nobuaki
Coughlin Andrew
McDermott Will & Emery LLP
Panasonic Corporation
Ton Toan
LandOfFree
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