Light emitting diode devices and manufacturing method thereof

Details Light emitting diode devices and manufacturing method thereof Light emitting diode devices and manufacturing method thereof

2008-02-07

2011-11-01

Landau, Matthew (Department: 2813)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Packaging or treatment of packaged semiconductor

C438S458000, C438S459000, C438S046000, C257SE21599, C257SE33001

Reexamination Certificate

active

08048696

ABSTRACT:
A light emitting diode (LED) device includes a stacked epitaxial structure, a heat-conductive plate and a seed layer. The stacked epitaxial structure sequentially includes a first semiconductor layer (N—GaN), a light emitting layer, and a second semiconductor layer (P—GaN). The heat-conductive plate is disposed on the first semiconductor layer, and the seed layer is disposed between the first semiconductor layer and the heat-conductive plate. Also, the present invention discloses a manufacturing method thereof including the steps of: forming at least one temporary substrate, which is made by a curable polymer material, on an LED device, and forming at least a heat-conductive plate on the LED device.

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