Light-emitting diode device with reduced scatter

Details Light-emitting diode device with reduced scatter Light-emitting diode device with reduced scatter

1996-10-10

1998-11-24

Munson, Gene M.

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With housing or contact structure

257 88, 257 98, H01L 3300

Patent

active

058411542

ABSTRACT:
A light-emitting diode device includes a light-emitting diode, a lens cap made of synthetic resin, for covering the light-emitting surface of the light-emitting diode means, and a refractive layer formed between the light-emitting surface and the lens cap, the refractive layer having a composition, such as an air layer, with a refractive index different from the refractive index of said synthetic resin. In this arrangement the relationship between the light intensity and directional angles is shown by characteristics in which the light intensity is maximum in the center of the directional angles, and is relatively flat in the form of a sinusoid in the wide range of the directional angles. Therefore, even when the characteristics of each light-emitting diode is not verified, a predetermined light-signal transmission range is readily obtained without being affected by a scatter in the characteristics.

REFERENCES:
patent: 3715636 (1973-02-01), Jaffe et al.
patent: 3760237 (1973-09-01), Jaffe
patent: 4316208 (1982-02-01), Kobayashi et al.
patent: 5266817 (1993-11-01), Lin

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