Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With heterojunction
Reexamination Certificate
2011-03-08
2011-03-08
Smoot, Stephen W (Department: 2813)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With heterojunction
C257S103000, C257S196000, C257SE33034
Reexamination Certificate
active
07902562
ABSTRACT:
A light-emitting diode device (LED) device and manufacturing methods thereof are provided, wherein the LED device comprises a substrate, a first n-type semiconductor layer, an n-type three-dimensional electron cloud structure, a second n-type semiconductor layer, an active layer and a p-type semiconductor layer. The first n-type semiconductor layer, the n-type three-dimensional electron cloud structure, the second n-type semiconductor layer, the active layer and the p-type semiconductor layer are subsequently grown on the substrate.
REFERENCES:
patent: 6121638 (2000-09-01), Rennie et al.
patent: 6608328 (2003-08-01), Kuo et al.
patent: 6631149 (2003-10-01), Tezen et al.
Chen Tsung-Kuang
Chu Jui-Yi
Hsu Yu-Pin
Kuo Cheng-Ta
Wang Chun-Kai
Bacon & Thomas PLLC
Epistar Corporation
Smoot Stephen W
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