Light emitting diode device that includes a three...

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With heterojunction

Reexamination Certificate

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Details

C257S103000, C257S196000, C257SE33034

Reexamination Certificate

active

07902562

ABSTRACT:
A light-emitting diode device (LED) device and manufacturing methods thereof are provided, wherein the LED device comprises a substrate, a first n-type semiconductor layer, an n-type three-dimensional electron cloud structure, a second n-type semiconductor layer, an active layer and a p-type semiconductor layer. The first n-type semiconductor layer, the n-type three-dimensional electron cloud structure, the second n-type semiconductor layer, the active layer and the p-type semiconductor layer are subsequently grown on the substrate.

REFERENCES:
patent: 6121638 (2000-09-01), Rennie et al.
patent: 6608328 (2003-08-01), Kuo et al.
patent: 6631149 (2003-10-01), Tezen et al.

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