Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With reflector – opaque mask – or optical element integral...
Reexamination Certificate
2010-01-11
2011-12-20
Louie, Wai Sing (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With reflector, opaque mask, or optical element integral...
C257SE33068, C257SE21158
Reexamination Certificate
active
08080829
ABSTRACT:
A light-emitting diode device includes: a substrate; a light-emitting layered structure formed on the substrate; a multi-functional layer having a first main portion and formed on the light-emitting layered structure for spreading current laterally and for reflecting light emitted from the light-emitting layered structure; and first and second electrodes electrically coupled to the light-emitting layered structure. The first electrode is formed on the light-emitting layered structure and has a first electrode main part. The first main portion of the multi-functional layer is aligned below and is provided with a size larger than that of the first electrode main part.
REFERENCES:
patent: 7075115 (2006-07-01), Sakamoto et al.
patent: 7132691 (2006-11-01), Tanabe et al.
patent: 7910941 (2011-03-01), Chen et al.
Lin Chih-Sheng
Wu Che-Hsiung
Jahan Bilkis
Louie Wai Sing
Marsh & Fischmann & Breyfogle LLP
Ubilux Optoelectronics Corporation
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