Light emitting diode device having four discrete regions

Details Light emitting diode device having four discrete regions Light emitting diode device having four discrete regions

1994-02-17

1997-04-08

Saadat, Mahshid D.

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Electromagnetic or particle radiation

257 40, 257 79, 257 98, H01L 2714, H01L 3100

Patent

active

056190581

ABSTRACT:
An integrated circuit device with a light-emitting diode thereon is disclosed. The device has discrete regions which function in concert to emit light when a suitable amount of voltage is provided. The device has four discrete regions: a first doped silicon region; a second silicon dioxide region; a third organic material region; and a fourth conducting material region. The first and fourth regions are electrodes which inject holes and electrons into the conducting organic material. The second region lowers the energy barrier between the first and third regions which improves the efficiency with which the polymer emits light. The diode of the present invention is fabricated on an integrated circuit using conventional integrated circuit fabrication techniques.

REFERENCES:
patent: 5172385 (1992-12-01), Forrest et al.
patent: 5220445 (1993-06-01), Takenaka et al.
patent: 5362977 (1994-11-01), Hunt et al.

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