Light emitting diode device and manufacturing method therof

Details Light emitting diode device and manufacturing method therof Light emitting diode device and manufacturing method therof

2008-09-08

2010-10-26

Prenty, Mark (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With housing or contact structure

C257SE33064

Reexamination Certificate

active

07821026

ABSTRACT:
A light-emitting diode (LED) device and manufacturing methods thereof are provided, wherein the LED device comprises a substrate, a first type conductivity semiconductor layer, an active layer, a second type conductivity semiconductor layer, a transparent conductive oxide stack structure, a first electrode, and a second electrode. The first semiconductor layer on the substrate has a first portion and a second portion. The active layer and the second semiconductor layer are subsequently set on the first portion. The transparent conductive oxide stack structure on the second semiconductor layer has at least two resistant interfaces. The first electrode is above the second portion, and the second electrode is above the transparent conductive oxide stack structure.

REFERENCES:
patent: 2009/0065794 (2009-03-01), Yu et al.

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