Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With reflector – opaque mask – or optical element integral...
Reexamination Certificate
2008-11-12
2010-10-19
Dickey, Thomas L (Department: 2893)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With reflector, opaque mask, or optical element integral...
C257SE33067, C257SE25032, C438S029000, C438S069000
Reexamination Certificate
active
07816703
ABSTRACT:
A light-emitting diode device includes an epitaxial layer, a current blocking layer and a current spreading layer. The current blocking layer is disposed on one side of the epitaxial layer and contacts with a portion of the epitaxial layer. The current spreading layer is disposed on one side of the epitaxial layer and contacts with at least a portion of the current blocking layer.
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Sugawara et al., “High-brightness InGaAlP green light-emitting diodes”, 1992, Applied Phys. Lett., vol. 61, No. 15, pp. 1775-1777.
Chen Chao-Min
Chen Huang-Kun
Chen Shih-Peng
Shiue Ching-Chuan
Delta Electronics , Inc.
Dickey Thomas L
Muncy Geissler Olds & Lowe, PLLC
Yushin Nikolay
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