Light-emitting diode device and manufacturing method thereof

Details Light-emitting diode device and manufacturing method thereof Light-emitting diode device and manufacturing method thereof

2011-08-30

2011-08-30

Prenty, Mark (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With reflector, opaque mask, or optical element integral...

C257SE33068

Reexamination Certificate

active

08008680

ABSTRACT:
A light-emitting diode (LED) device and manufacturing methods thereof are provided, wherein the LED device comprises a substrate, a first type conductivity semiconductor layer, an active layer, a second type conductivity semiconductor layer, a transparent conductive oxide stack structure, a first electrode, and a second electrode. The first semiconductor layer on the substrate has a first portion and a second portion. The active layer and the second semiconductor layer are subsequently set on the first portion. The transparent conductive oxide stack structure on the second semiconductor layer has at least two resistant interfaces. The first electrode is above the second portion, and the second electrode is above the transparent conductive oxide stack structure.

REFERENCES:
patent: 7821026 (2010-10-01), Yu et al.
patent: 2009/0065794 (2009-03-01), Yu et al.

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