Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – In combination with or also constituting light responsive...
Reexamination Certificate
2005-06-28
2005-06-28
Pham, Long (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
In combination with or also constituting light responsive...
C257S094000, C257S099000, C257S103000
Reexamination Certificate
active
06911673
ABSTRACT:
Light emitting diode (LED) device has a P-type GaAlAs cladding layer, a P-type GaAlAs active layer, an N-type GaAlAs cladding layer and a circular electrode formed in sequence on a P-type GaAs substrate and mesa etched. An area of a PN contact surface between the P-type active layer and the N-type cladding layer is between 0.053 mm2and 0.058 mm2which allows qualification criteria of the LED device for communications to be easily satisfied.
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Louie Wai-Sing
Pham Long
Sharp Kabushiki Kaisha
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