Light emitting diode chip with double close-loop electrode...

Details Light emitting diode chip with double close-loop electrode... Light emitting diode chip with double close-loop electrode...

2006-02-26

2008-12-09

Picardat, Kevin M (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

C257S091000, C257S099000

Reexamination Certificate

active

07462868

ABSTRACT:
An LED chip with double close-loop electrode design includes a substrate, a first-type doped semiconductor layer, a light emitting layer, a second-type doped semiconductor layer, a first electrode and a second electrode. The first-type doped semiconductor layer is disposed on the substrate, the light emitting layer is disposed on the first-type doped semiconductor layer and the second-type doped semiconductor layer is disposed on the light emitting layer. The first electrode, disposed on the first-type doped semiconductor layer, has a close-loop pattern. The second electrode, disposed on the second-type doped semiconductor layer, is located inside a region encircled by the first electrode and has a close-loop pattern. In this way, the LED chip with double close-loop electrode design is able to avoid deteriorated luminous efficiency caused by broken electrodes.

REFERENCES:
patent: 5861636 (1999-01-01), Dutta et al.
patent: 6307218 (2001-10-01), Steigerwald et al.
patent: 6344665 (2002-02-01), Sung et al.
patent: 6445007 (2002-09-01), Wu et al.
patent: 6518598 (2003-02-01), Chen
patent: 2006/0001035 (2006-01-01), Suehiro et al.

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