Light-emitting-diode chip comprising a sequence of GAN-based...

Details Light-emitting-diode chip comprising a sequence of GAN-based... Light-emitting-diode chip comprising a sequence of GAN-based...

2011-05-10

2011-05-10

Jackson, Jr., Jerome (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With housing or contact structure

C257S098000, C257S103000, C257SE33002

Reexamination Certificate

active

07939844

ABSTRACT:
A light-emitting diode chip (1) comprises a GaN-based, radiation-emitting epitaxial layer sequence (3), an active region (19), an n-doped layer (4) and a p-doped layer (5). The p-doped layer (5) is provided, on its main surface (9) facing away from the active region (19), with a reflective contact metallization (6) comprising a radioparent contact layer (15) and a reflective layer (16). Methods for fabricating LED chips of this type by thin-film technology are provided, as are LED components containing such LED chips.

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