Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure
Reexamination Certificate
2009-12-30
2011-12-13
Lebentritt, Michael (Department: 2829)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
C257SE21121, C438S042000
Reexamination Certificate
active
08076675
ABSTRACT:
An LED chip includes a substrate and a p-n junction type semiconductor light-emitting structure. The substrate has a first surface and a second surface opposite to the second surface. The p-n junction type semiconductor light-emitting structure is arranged on the first surface of the substrate. A plurality of blind holes is defined in the second surface of the substrate and extends from the second surface towards the first surface. A heat conductive material is filled in each of the plurality of blind holes thereby forming a plurality of heat conductive poles in the plurality of blind holes.
REFERENCES:
patent: 2002/0017653 (2002-02-01), Chuang
patent: 2005/0059238 (2005-03-01), Chen et al.
patent: 2007/0069222 (2007-03-01), Ko et al.
Altis Law Group, Inc.
Hon Hai Precision Industry Co. Ltd.
Lebentritt Michael
Whelan Daniel
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