Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Patent
1991-01-18
1994-04-05
Hille, Rolf
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
257 81, 257 88, 257 99, 257522, H01K 2710
Patent
active
053007883
ABSTRACT:
Light emitting diodes (LEDs) and LED bars and LED arrays formed of semiconductive material, such as III-V, and particularly AlGaAs/GaAs material, are formed in very thin structures using organometallic vapor deposition (OMCVD). Semiconductor p-n junctions are formed as deposited using carbon as the p-type impurity dopant. Various lift-off methods are described which permit back side processing when the growth substrate is removed and also enable device registration for LED bars and arrays to be maintained.
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Dingle Brenda
Fan John C. C.
McClelland Robert W.
Shastry Shambhu
Spitzer Mark B.
Hille Rolf
Kopin Corporation
Potter Roy
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