Light-emitting diode array with projections

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – Plural light emitting devices

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372 45, 372 48, 346107R, 313500, 362800, 257 15, 257 95, 257 98, H01L 3300

Patent

active

051628783

ABSTRACT:
A light-emitting diode array having improved optical output efficiency and uniformity without loss of reliability or reproducibility is described. The array is formed of an n-type conductivity GaAs buffer layer on an n-type conductivity GaAs substrate, followed by 25-pair n-type conductivity Al.sub.y Ga.sub.1-y As/AlAs semiconductor multilayer mirror, a p-type conductivity Al.sub.x Ga.sub.1-x As active layer, and a p++ type conductivity GaAs contact layer. The surface of the emission region is a total reflection prevention surface with a sawtooth-shaped projection configuration. This provides a large decrease in total reflection loss of light from the emission layer, and also enables light propagating in the opposite direction to the output surface to be efficiently outputed.

REFERENCES:
patent: 5005057 (1991-04-01), Izumiya et al.
patent: 5040044 (1991-08-01), Noguchi et al.
patent: 5055893 (1991-10-01), Sasagawa

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