Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – Plural light emitting devices
Patent
1993-08-26
1995-04-11
Prenty, Mark V.
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
Plural light emitting devices
257 93, 257 98, 257103, 257183, H01L 3300
Patent
active
054060958
ABSTRACT:
An LED (light emitting diode) array of the present invention has a plurality of light emitting diodes aligned in row on a substrate crystal. Each of the light emitting diodes has a double hetero-structure formed by causing a light emitting layer to be interposed between p-type and n-type semi-conductive layers and is isolated with isolating mesa grooves. A reflecting layer is provided between the substrate crystal and one of the p-type and n-type semi-conductive layers. The reflecting layer comprises a plurality of semi-conductive layers having at least different refractive indexes of 2 or more than 2-kinds, each of the semi-conductive layers made of semiconductor having the same polarity as that of the substrate crystal and having a wider forbidden band width than that of the light emitting layer. Further, the isolating mesa grooves are provided by a wet etching using an etching liquid of H.sub.3 PO.sub.4 .multidot.H.sub.2 O.sub.2 having volume ratio of H.sub.3 PO.sub.4 : H.sub.2 O.sub.2 =1.about.5:1, thus, the LED array having a high integration and a high light emitting output can be successfully produced.
REFERENCES:
patent: 5260589 (1993-11-01), Yamauchi et al.
Journal of Crystal Growth 107(1991) pp. 832-835, 1991, T. Kato et al, "GaAs/GaAlAs surface emitting IR LED with Bragg reflector grown by MOCVD".
Endo Manabu
Katayama Taku
Koyama Yoshihisa
Morita Katsuhiko
Yoshida Toshiki
Meller Michael N.
Prenty Mark V.
Victor Company of Japan Ltd.
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