Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With reflector – opaque mask – or optical element integral...
Reexamination Certificate
2011-03-22
2011-03-22
Toledo, Fernando L (Department: 2895)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With reflector, opaque mask, or optical element integral...
C257S233000, C257S599000, C438S029000, C438S042000
Reexamination Certificate
active
07910941
ABSTRACT:
A light-emitting diode (LED) apparatus includes an epitaxial multilayer, a micro
ano rugged layer and an anti-reflection layer. The epitaxial multilayer has a first semiconductor layer, an active layer and a second semiconductor layer in sequence. The micro
ano rugged layer is disposed on the first semiconductor layer of the epitaxial multilayer. The anti-reflection layer is disposed on the micro
ano rugged layer. In addition, a manufacturing method of the LED apparatus is also disclosed.
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Chen Chao-Min
Chen Huang-Kun
Chen Shih-Peng
Shiue Ching-Chuan
Wang Horng-Jou
Delta Electronics , Inc.
Muncy Geissler Olds & Lowe, PLLC
Toledo Fernando L
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