Light-emitting diode apparatus and manufacturing method thereof

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With reflector – opaque mask – or optical element integral...

Reexamination Certificate

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C257S233000, C257S599000, C438S029000, C438S042000

Reexamination Certificate

active

07910941

ABSTRACT:
A light-emitting diode (LED) apparatus includes an epitaxial multilayer, a micro
ano rugged layer and an anti-reflection layer. The epitaxial multilayer has a first semiconductor layer, an active layer and a second semiconductor layer in sequence. The micro
ano rugged layer is disposed on the first semiconductor layer of the epitaxial multilayer. The anti-reflection layer is disposed on the micro
ano rugged layer. In addition, a manufacturing method of the LED apparatus is also disclosed.

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