Light-emitting diode and the manufacturing method of the same

Details Light-emitting diode and the manufacturing method of the same Light-emitting diode and the manufacturing method of the same

2005-11-29

2005-11-29

Fourson, George (Department: 2823)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Mesa formation

C438S412000, C438S503000, C438S094000

Reexamination Certificate

active

06969627

ABSTRACT:
The specification discloses a light-emitting diode and the corresponding manufacturing method. A GaN thick film with a slant surface is formed on the surface of a substrate. An epitaxial slant surface is naturally formed using the properties of the GaN epitaxy. An LED structure is grown on the GaN thick film to form an LED device. This disclosed method and device can simplify the manufacturing process. The invention further uses the GaN thick film epitaxial property to make various kinds of LED chips with multiple slant surfaces and different structures. Since the surface area for emitting light on the chip increases and the multiple slant surfaces reduce the chances of total internal reflections, the light emission efficiency of the invention is much better than the prior art.

REFERENCES:
patent: 6229160 (2001-05-01), Krames et al.
patent: 2002/0028564 (2002-03-01), Motoki et al.
patent: 2002/0117695 (2002-08-01), Borges et al.
patent: 2003/0020087 (2003-01-01), Goto et al.

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