Light emitting diode and process for fabricating the same

Details Light emitting diode and process for fabricating the same Light emitting diode and process for fabricating the same

1994-06-30

1996-02-13

Meier, Stephen D.

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With housing or contact structure

257 95, 257 81, H01L 3300, H01L 2715, H01L 3112

Patent

active

054913500

ABSTRACT:
Disclosed is a light emitting diode in which double hetero-structure epitaxial layers defining a light emitting portion are connected with a substrate by a mesa portion, and a cavity layer is formed by providing a mesa portion between the substrate and an adjoining layer of the epitaxial layers. Resin may be put into the cavity layer. Also provided is a process for fabricating a light emitting diode wherein the process comprises the steps of growing an AlGaAs layer with high mixed crystal ratio as a sacrificial layer, growing the epitaxial layers on the sacrificial layer to be connected with the mesa portion, and dissolving and removing the sacrificial layer to form the cavity layer. Light is reflected at the interface between a clad layer and the cavity layer or the resin put into the cavity layer, as a consequence, a light-emitting output can be improved. A thick AlGaAs layer with high AlAs mixed crystal ratio for the substrate is not required to be provided, so that the fabrication becomes easy, and uniformity in characteristics can be obtained.

REFERENCES:
patent: 5073806 (1991-12-01), Idei
Chang et al, "Source Shaping in the Fabrication of Light-Emitting Diodes . . . " IBM Tech Discl Bul, vol 15 No. 1, 1972, pp. 180-181.

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