Light emitting diode and method of the same

Details Light emitting diode and method of the same Light emitting diode and method of the same

2006-12-12

2006-12-12

Pert, Evan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With heterojunction

C257S079000, C257S081000, C257S098000, C257S099000, C257SE25032, C438S022000

Reexamination Certificate

active

07148517

ABSTRACT:
A light emitting diode and a method of the same are provided. The light emitting diode includes a light-emitting structure, a silicon substrate and a bonding layer. The light-emitting structure includes two semiconductor layers of different doped types. The light-emitting structure is capable of emitting light when a current passes through. The silicon substrate includes two zones of different doped types. The bonding layer is interposed between the light-emitting structure and the silicon substrate so that the semiconductor layer and the zone closest to the bonding layer are of different doped types.

REFERENCES:
patent: 6287882 (2001-09-01), Chang et al.
patent: 6593597 (2003-07-01), Sheu
patent: 6597019 (2003-07-01), Inoue et al.
patent: 6661032 (2003-12-01), Meng et al.
patent: 6861677 (2005-03-01), Chen
patent: 2003/0122139 (2003-07-01), Meng et al.
Homg et al; “AlGlnP light-emitting Diodes with Mirror Substrates Fabricated by Wafer Bonding”;Appl. Phys. Lett., vol. 75, No. 20, Nov. 15, 1999; pp. 3054-3056.

Affiliated with

Also associated with

Rating

Light emitting diode and method of the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Light emitting diode and method of the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Light emitting diode and method of the same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3670714