Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Compound semiconductor
Reexamination Certificate
2005-11-07
2009-11-10
Mandala, Victor A (Department: 2826)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Compound semiconductor
C438S464000, C427S010000, C427S079000, C427S099300
Reexamination Certificate
active
07615392
ABSTRACT:
A light emitting diode (LED) and a method of making the same are disclosed. The present invention uses a metal layer of high conductivity and high reflectivity to prevent the substrate from absorbing the light emitted. This invention also uses the bonding technology of dielectric material thin film to replace the substrate of epitaxial growth with high thermal conductivity substrate to enhance the heat dissipation of the chip, thereby increasing the performance stability of the LED, and making the LED applicable under higher current.
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Windisch et al., “High-efficiency non-resonant cavity light-emitting diodes,” Electronics Letters, vol. 34, No. 11, May 28, 1998, pp. 1153-1155.
Epistar Corporation
Mandala Victor A
Muncy Geissler Olds & Lowe, PLLC
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