Light emitting diode and method of making the same

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With reflector – opaque mask – or optical element integral...

Reexamination Certificate

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C257S103000, C257SE33001, C438S029000, C438S047000

Reexamination Certificate

active

07129527

ABSTRACT:
A light emitting diode (LED) and a method of making the same are disclosed. The present invention uses a metal layer of high conductivity and high reflectivity to prevent the substrate from absorbing the light emitted. This invention also uses the bonding technology of dielectric material thin film to replace the substrate of epitaxial growth with high thermal conductivity substrate to enhance the heat dissipation of the chip, thereby increasing the performance stability of the LED, and making the LED applicable under higher current.

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patent: 6709883 (2004-03-01), Yang et al.
patent: 11-168236 (1999-06-01), None
Windisch et al., “High-efficiency non-resonant cavity light-emitting diodes,” Electronics Letters, vol. 34, No. 11, May 28, 1998, pp. 1153-1155.

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