Light emitting diode and method of making the same

Details Light emitting diode and method of making the same Light emitting diode and method of making the same

2006-10-31

2006-10-31

Pert, Evan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With reflector, opaque mask, or optical element integral...

C257S103000, C257SE33001, C438S029000, C438S047000

Reexamination Certificate

active

07129527

ABSTRACT:
A light emitting diode (LED) and a method of making the same are disclosed. The present invention uses a metal layer of high conductivity and high reflectivity to prevent the substrate from absorbing the light emitted. This invention also uses the bonding technology of dielectric material thin film to replace the substrate of epitaxial growth with high thermal conductivity substrate to enhance the heat dissipation of the chip, thereby increasing the performance stability of the LED, and making the LED applicable under higher current.

REFERENCES:
patent: 5574744 (1996-11-01), Gaw et al.
patent: 6071795 (2000-06-01), Cheung et al.
patent: 6348698 (2002-02-01), Sato
patent: 6462358 (2002-10-01), Lin et al.
patent: 6682950 (2004-01-01), Yang et al.
patent: 6709883 (2004-03-01), Yang et al.
patent: 11-168236 (1999-06-01), None
Windisch et al., “High-efficiency non-resonant cavity light-emitting diodes,” Electronics Letters, vol. 34, No. 11, May 28, 1998, pp. 1153-1155.

Affiliated with

Also associated with

Rating

Light emitting diode and method of making the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Light emitting diode and method of making the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Light emitting diode and method of making the same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3653192