Light emitting diode and method of making the same

Details Light emitting diode and method of making the same Light emitting diode and method of making the same

2005-02-08

2005-02-08

Kang, Donghee (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With housing or contact structure

C257S081000, C257S091000, C257S094000, C257S095000, C257S103000, C438S022000, C438S029000, C438S037000, C438S046000, C438S047000

Reexamination Certificate

active

06853011

ABSTRACT:
A light emitting epi-layer structure contains a temporary substrate of absorption light type on one side. The other side thereof is then adhered to a transparent substrate of light absorption free by BCB bonding layer. After that, the light absorption substrate portion is removed. The resulted light emitting structure is then patterned to form a connection channel to connect the first ohmic contact electrode and form an isolation trench to separate the active layer of the light emitting structure into two parts. Thereafter, a second ohmic contact electrode on the cladding layer and a bonding metal layer filled in the first channel and on second ohmic contact electrode are successively formed. The resulted LED structure is hence convenient for flip-chip package since two bonding metal layers have the same altitude.

REFERENCES:
patent: 6201265 (2001-03-01), Teraguchi
patent: 20010045564 (2001-11-01), Koike et al.

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