Light emitting diode and method of making the same

Details Light emitting diode and method of making the same Light emitting diode and method of making the same

2005-01-04

2005-01-04

Thomas, Tom (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With reflector, opaque mask, or optical element integral...

C257S079000, C257S099000, C257S094000, C257S096000

Reexamination Certificate

active

06838704

ABSTRACT:
A high reflective and conductive metal substrate instead of a GaAs substrate which is a light absorption substrate is utilized for the light emitting diode. The processes include forming a mirror protection film on the light emitting epi-layers. The mounting between the reflective and conductive metal substrate on the protection film is though a metal adhesive layer. Afterward, the temporal GaAs substrate is removed. Thereafter, a trench is formed to remove a portion of light emitting epi-layers to expose a p-type ohmic contact epi-layer and the first ohmic contact metal electrode of the light emitting epi-layers. Then the second ohmic contact metal electrode and a wire bonding layer formation are followed. The LED can enhance capability of the light reflect instead of light absorption.

REFERENCES:
patent: 6222207 (2001-04-01), Carter-Coman et al.
patent: 6462358 (2002-10-01), Lin et al.
patent: 6583443 (2003-06-01), Chang et al.
patent: 20030143772 (2003-07-01), Chen

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