Light emitting diode and method of fabricating the same

Details Light emitting diode and method of fabricating the same Light emitting diode and method of fabricating the same

2008-05-16

2011-10-18

Louie, Wai Sing (Department: 2814)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Including integrally formed optical element

C438S022000, C438S027000, C438S047000, C257S079000, C257S094000, C257S095000, C257S098000, C257SE33067

Reexamination Certificate

active

08039280

ABSTRACT:
The present invention provides a method of fabricating a light emitting diode, which comprises the steps of forming a compound semiconductor layer on a substrate, the compound semiconductor layer including a lower semiconductor layer, an active layer and an upper semiconductor layer; and scratching a surface of the substrate by rubbing the substrate with an abrasive. According to the present invention, the abrasive is used to rub and scratch the surface of the light emitting diode, thereby making it possible to cause the light emitted from the active layer to effectively exit to the outside. Therefore, the light extraction efficiency of the light emitting diode can be improved.

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Office Action issued by The State Intellectual Property Office of P.R. China on Oct. 12, 2010 in corresponding Chinese Patent Application No. 200880016875.3.

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