Light emitting diode and method of fabricating the same

Details Light emitting diode and method of fabricating the same Light emitting diode and method of fabricating the same

2007-10-16

2007-10-16

Jackson, Jerome (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With heterojunction

C257S081000, C257S085000, C257S098000, C257S091000, C257S079000, C257S099000, C438S022000

Reexamination Certificate

active

11448832

ABSTRACT:
A light emitting diode (LED) and a method are provided for fabricating the a LED with an improved structure for better light emitting efficiency and better light output performance. The LED includes an n-GaN layer formed on a substrate to have a plurality of protrusions, thereby having an uneven surface, wherein a side surface of the protrusions is inclined with a first inclination angle α (35°≦α≦90°) with respect to an upper surface of the substrate; an active layer conformally formed on the surface of the n-GaN layer, wherein the surface of the active layer formed on the side surface of the protrusions is inclined with a second inclination angle β (35°≦β≦α) with respect to the upper surface of the substrate; a p-GaN layer conformally formed on the surface of the active layer, wherein the surface of the p-GaN layer formed on the surface of the inclined portion of the active layer is inclined with a third inclination angle γ (20°≦γ<β) with respect to the upper surface of the substrate; and an n-electrode formed on a predetermined area of the n-GaN layer to correspond to the p-electrode.

REFERENCES:
patent: 6855958 (2005-02-01), Sato et al.
patent: 2005/0001227 (2005-01-01), Niki et al.
patent: 2002-185040 (2002-06-01), None
Office Action issued by the Korea Patent Office on Jul. 26, 2006.

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