Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure
Reexamination Certificate
2008-04-08
2008-04-08
Potter, Roy Karl (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
C257S081000
Reexamination Certificate
active
11316437
ABSTRACT:
A light emitting diode and the method of the same are provided. The light emitting diode includes a light emitting structure and a metal reflective layer. The light emitting structure includes two semiconductor layers and an active layer. Oxide elements are added into the metal reflective layer to improve the adhesion between the reflective layer and the light emitting structure. Additionally, a transparent contact layer can be formed between the light emitting structure and the reflective layer in order to enhance the luminance efficiency.
REFERENCES:
patent: 6794690 (2004-09-01), Uemura
patent: 6797987 (2004-09-01), Chen
patent: 6812502 (2004-11-01), Chien et al.
patent: 2004/0182914 (2004-09-01), Venugopalan
patent: 2005/0045907 (2005-03-01), Song et al.
patent: 2004-253763 (2004-09-01), None
Chang Chih-Sung
Chiang Chih-Li
Tsai Tzong-Liang
Wen Way-Jze
Epistar Corporation
Potter Roy Karl
Snell & Wilmer L.L.P.
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