Light emitting diode and method making the same

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C257S081000

Reexamination Certificate

active

11316437

ABSTRACT:
A light emitting diode and the method of the same are provided. The light emitting diode includes a light emitting structure and a metal reflective layer. The light emitting structure includes two semiconductor layers and an active layer. Oxide elements are added into the metal reflective layer to improve the adhesion between the reflective layer and the light emitting structure. Additionally, a transparent contact layer can be formed between the light emitting structure and the reflective layer in order to enhance the luminance efficiency.

REFERENCES:
patent: 6794690 (2004-09-01), Uemura
patent: 6797987 (2004-09-01), Chen
patent: 6812502 (2004-11-01), Chien et al.
patent: 2004/0182914 (2004-09-01), Venugopalan
patent: 2005/0045907 (2005-03-01), Song et al.
patent: 2004-253763 (2004-09-01), None

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Light emitting diode and method making the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Light emitting diode and method making the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Light emitting diode and method making the same will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3913710

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.