Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Reexamination Certificate
2006-06-13
2006-06-13
Wojciechowicz, Edward (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
C257S435000, C257S437000, C257S438000
Reexamination Certificate
active
07061065
ABSTRACT:
The present invention discloses an LED (light emitting diode), which primarily includes a transparent window, such as a glass substrate, an LED epitaxial layer including at least an active layer, and a transparent conductive film formed between the transparent window and the LED epitaxial layer. The transparent conductive film can be oxides, nitrides or fluorides of metals, for example, ITO, InO, SnO, ZnO, etc. By involving the transparent conductive film, current spreading is improved and resistance is reduced because of larger cross section areas provided, particularly compared with the conventional spin on glass or polymer adhesives. Additionally, light-emitting efficiency can be improved since the conventional opaque substrate, such as a GaAs substrate on which the active layer is grown can be etched away after the transparent window and the active layer are combined with the transparent conductive film.
REFERENCES:
patent: 5344517 (1994-09-01), Houlding
patent: RE35665 (1997-11-01), Lin et al.
Chiu Chi-Ying
Horng Ray-Hua
Huang Shao-Hua
Wu Tung-Hsing
Baxley Charles E.
National Chung-Hsing University
Wojciechowicz Edward
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