Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Including integrally formed optical element
Reexamination Certificate
2007-02-22
2008-10-21
Smith, Matthew S. (Department: 2823)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Including integrally formed optical element
C438S042000, C438S039000, C438S071000, C257S091000, C257S436000, C257S435000, C257SE21291
Reexamination Certificate
active
07439091
ABSTRACT:
A light-emitting diode (LED) and a method for manufacturing the same are described. The method for manufacturing the LED comprises the following steps. An illuminant epitaxial structure is provided, in which the illuminant epitaxial structure has a first surface and a second surface on opposite sides, and a substrate is deposed on the first surface of the illuminant epitaxial structure. A metal layer is formed on the second surface of the illuminant epitaxial structure. An anodic oxidization step is performed to oxidize the metal layer, so as to form a metal oxide layer. An etching step is performed to remove a portion of the metal oxide layer, so as to form a plurality of holes in the metal oxide layer.
REFERENCES:
patent: 6225647 (2001-05-01), Kurtz et al.
patent: 6900473 (2005-05-01), Yoshitake et al.
patent: 6069539 (1994-03-01), None
patent: 6077527 (1994-03-01), None
patent: 9260791 (1997-10-01), None
patent: 2001305360 (2001-10-01), None
Chen Shi-Ming
Chu Chang-Hsing
Houng Mau-Phon
Yen Te-Chi
Epistar Corporation
Hsu Winston
Maldonado Julio J.
Smith Matthew S.
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