Light emitting diode and method for manufacturing the same

Details Light emitting diode and method for manufacturing the same Light emitting diode and method for manufacturing the same

2011-01-11

2011-01-11

Richards, N Drew (Department: 2895)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With heterojunction

C257S013000, C257S018000, C257S028000, C257S088000, C257S101000

Reexamination Certificate

active

07868337

ABSTRACT:
Provided are a light emitting diode (LED) and a method for manufacturing the same. The LED includes an n-type semiconductor layer, an active layer, and a p-type semiconductor layer. The active layer includes a well layer and a barrier layer that are alternately laminated at least twice. The barrier layer has a thickness at least twice larger than a thickness of the well layer.

REFERENCES:
patent: 5684309 (1997-11-01), McIntosh et al.
patent: 2006/0027814 (2006-02-01), Watanabe et al.
patent: 10-2000-0074844 (2000-12-01), None

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